Development of high voltage-CMOS sensors within the CERN-RD50 collaboration
نویسندگان
چکیده
This paper presents work done by the CERN-RD50 collaboration to develop and study monolithic CMOS sensors for future hadron colliders, especially in terms of radiation tolerance, time resolution granularity. Currently is completing performance evaluation RD50-MPW2 has recently submitted RD50-MPW3, second third prototype sensor chips designed collaboration. The gives an overview main design aspects results first two RD50-MPW1 RD50-MPW2, details latest RD50-MPW3. a small with 8 x matrix active pixels which implement analogue readout electronics only solutions low leakage currents. been evaluated laboratory also at proton ion beam facilities, before after irradiation neutrons up 2⋅1015 neq/cm 2. RD50-MPW3 more advanced 64 integrate both digital inside sensing diodes. To alleviate routing congestion minimise crosstalk noise, are serially configured organised double column scheme. optimised peripheral effective chip configuration, based on I2C protocol, fast data transmission.
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research
سال: 2022
ISSN: ['1872-9576', '0168-9002']
DOI: https://doi.org/10.1016/j.nima.2022.166826